INFLUENCE DE L'ENTRAINEMENT MUTUEL DES ELECTRONS ET DES PHONONS SUR LE POUVOIR THERMOELECTRIQUE DU GE N ET DU SI NLUTSYAK VS; NITSOVICH VM.1973; UKRAIN. FIZ. ZH.; S.S.S.R.; DA. 1973; VOL. 18; NO 1; PP. 75-84; ABS. ANGL.; BIBL. 19 REF.Serial Issue

HALBLEITEREINKRISTALLE AUS DER SCHMELZE = MONOCRISTAUX SEMICONDUCTEURS REALISES A PARTIR DE L'ETAT DE FUSIONKELLER W.1973; FEINWERKTECH. U. MICRON.; DTSCH.; DA. 1973; VOL. 77; NO 3; PP. 107-116; BIBL. 46 REF.Serial Issue

MUONIUM IN SILICON AND GERMANIUM - A DEEP DONORWANG JSY; KITTEL C.1973; PHYS. REV., B; U.S.A.; DA. 1973; VOL. 7; NO 2; PP. 713-718; BIBL. 19 REF.Serial Issue

SELF-COMPENSATION OF DONORS IN HIGH-PURITY GAAS.WOLFE CM; STILLMAN GE.1975; PHYS. APPL. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 10; PP. 564-567; BIBL. 30 REF.Article

PROPRIETES ELECTRIQUES DE L'ARSENIURE DE GALLIUM IRRADIE PAR ELECTRONS ET NEUTRONSKOL'CHENKO TI; LOMAKO VM.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 9; PP. 1757-1760; BIBL. 9 REF.Article

PROCESSUS DE RECOMBINAISON DES PORTEURS A LA SURFACE DU GE ET DU SI LORS D'UNE EXCITATION LASERZUEV VA; LITOVCHENKO VG; GLINCHUK KD et al.1972; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1972; VOL. 6; NO 10; PP. 1936-1944; BIBL. 27 REF.Serial Issue

INTRINSIC SURFACE STATES OF (110) SURFACES OF GROUP IV AND III-V SEMICONDUCTORS.JOANNOPOULOS JD; COHEN ML.1974; PHYS. REV., B; U.S.A.; DA. 1974; VOL. 10; NO 12; PP. 5075-5081; BIBL. 10 REF.Article

HEAT-PULSE PROPAGATION IN P-TYPE SI AND GE UNDER UNIAXIAL STRESSFJELDLY T; ISHIGURO T; ELBAUM C et al.1973; PHYS. REV., B; U.S.A.; DA. 1973; VOL. 7; NO 4; PP. 1392-1410; BIBL. 39 REF.Serial Issue

BINDING ENERGY SHIFTS IN THE X-RAY PHOTOELECTRON SPECTRA OF A SERIES OF RELATED GROUP IV-A COMPOUNDSMORGAN WE; VAN WAZER JR.1973; J. PHYS. CHEM.; U.S.A.; DA. 1973; VOL. 77; NO 7; PP. 964-969; BIBL. 43 REF.Serial Issue

INTERBAND OPTICAL TRANSITION STRENGTHS IN SIO₂, GEO₂, SNO₂ AND TIO₂WEMPLE SH.1973; SOLID STATE COMMUNIC.; G.B.; DA. 1973; VOL. 12; NO 7; PP. 701-704; ABS. ALLEM.; BIBL. 13 REF.Serial Issue

PIEZOSPECTROSCOPY OF SINGLE AND DOUBLE ACCEPTORS IN GROUP-IV SEMICONDUCTORS.KARTHEUSER EP; RODRIGUEZ S; FISHER P et al.1974; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1974; VOL. 64; NO 1; PP. 11-28; BIBL. 12 REF.Article

CHEMICAL SHIFT PARAMETERS FOR SHALLOW DONORS IN SEMICONDUCTORSHALE EB.1973; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1973; VOL. 34; NO 4; PP. 621-629; BIBL. 33 REF.Serial Issue

ETUDE DES SOL. SOLIDES A BASE DE MONOSELENIURE DE BIABRIKOSOV N KH; BANKINA VF; KOLOMOETS LA et al.1972; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1972; VOL. 8; NO 12; PP. 2120-2124; BIBL. 6 REF.Serial Issue

DIVACANCY BINDING ENTHALPY IN SEMICONDUCTORS.VAN VECHTEN JA.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 11; NO 10; PP. 3910-3917; BIBL. 23 REF.Article

ON THE CALCULATION OF THE FORCE CONSTANTS FOR HALIDES AX₄^H(TD) USING AN EMPIRICAL CONTRAINT F₃₃(F₂)/F₁₁(A₁)=CONSTANT FOR SIMILAR MOLECULES AND IONS.ALIX A; CERF C; RAI SN et al.1975; Z. NATURFORSCH., A; DTSCH.; DA. 1975; VOL. 30; NO 5; PP. 627-635; BIBL. 39 REF.Article

COLORATION ELECTROLYTIQUE DES CRISTAUX D'HALOGENURES ALCALINS DOPES AU PB²⁺, SN²⁺ ET GE²⁺VELICESCU B; TOPA V.1973; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1973; VOL. 55; NO 2; PP. 793-799; ABS. ANGL.; BIBL. 11 REF.Serial Issue

BONDING AND ANTIBONDING POTENTIALS IN GROUP-IV SEMICONDUCTORS.KEYES RW.1975; PHYS. REV. LETTERS; U.S.A.; DA. 1975; VOL. 34; NO 21; PP. 1334-1337; BIBL. 14 REF.Article

SECONDARY BONDING TO NONMETALLIC ELEMENTSALCOCK NW.1972; ADV. INORG. CHEM. RADIOCHEM.; U.S.A.; DA. 1972; VOL. 15; PP. 1-58; BIBL. 5 P.Serial Issue

RECOMBINAISON RADIATIVE DANS L'ARSENIURE D'INDIUM IMPLANTE PAR ELEMENTS DU GROUPE IV BGUSEVA MI; ZOTOVA NV; KOVAL AV et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 5; PP. 901-903; BIBL. 3 REF.Article

NOUVEAUX COMPOSES TERNAIRES DE COMPOSITION EQUIATOMIQUE DANS LES SYSTEMES A DEUX METAUX DE TRANSITION ET SILICIUM OU GERMANIUMYARMOLYUK YA P; GLADISHEVS'KIJ JE YI.1974; DOP. AKAD. NAUK U.R.S.R., B; S.S.S.R.; DA. 1974; VOL. 36; NO 11; PP. 1030-1032; ABS. ANGL. RUSSE; BIBL. 8 REF.Article

OPTICAL NONLINEARITY OF SOME STANNITE AND FAMATINITE CRYSTALS.SAMANTA LK; BHAR GC.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 41; NO 1; PP. 331-337; ABS. ALLEM.; BIBL. 16 REF.Article

SPECTROSCOPICAL INVESTIGATION OF ORDER-DISORDER IN SOME COMPOUNDS WITH SCHEELITE STRUCTURE.SCHIPPER WJ; BLASSE G.1974; Z. NATURFORSCH., B; DTSCH.; DA. 1974; VOL. 29; NO 5-6; PP. 340-346; BIBL. 16 REF.Article

OXIDATION, IMPURITY DIFFUSION, AND DEFECT GROWTH IN SILICON - AN OVERVIEWFAIR RB.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 6; PP. 1360-1368; BIBL. 64 REF.Article

FLUORENYLSILANE. III: UEBER DIE UMSETZUNG VON 9-FLUORENYL-TRIS(TRIMETHYLSILYL)-SILAN MIT CHLOR = FLUORENYL SILANES. III: REACTION DE FLUORENYL-9 TRIS-TRIMETHYLSILANE AVEC LE CHLORESCHUBERT U.1980; J. ORGANOMET. CHEM.; ISSN 0022-328X; CHE; DA. 1980; VOL. 197; NO 3; PP. 269-274; ABS. ENG; BIBL. 6 REF.Article

ESCA CHEMICAL SHIFTS AND TYPES OF CHEMICAL BINDING. I. GRADATIONS IN CHEMICAL SHIFTS FOR METAL OXIDES.JOHNSON O.1975; CHEM. SCRIPTA; SUEDE; DA. 1975; VOL. 8; NO 4; PP. 162-165; BIBL. 29 REF.Article